Abstract
This chapter examines challenges faced in the design of CMOS radio-frequency power amplifiers. The implementation of radio-frequency circuits in CMOS has been the focus of research in academia for the past decade because of the potential economic benefits it provides compared to more expensive alternative technologies currently used by the industry. An overview of GaAs MESFET and GaAs HBT processes is provided along with a description of CMOS technology. A comparison of CMOS and GaAs HBT technologies follows, highlighting the merits and challenges accompanying each technology. The last section of the chapter is devoted to reviewing characteristics of passive elements integrated in CMOS technologies, with an emphasis on properties of interest to power amplifier design.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
