Abstract
Glass has good electrical, optical and mechanical properties as a substrate for SiP application. Through glass via (TGV) interposer technology can avoid complex fabrication processes and the using of expensive equipments comparing with through silicon via(TSV). In addition, it can lower the cost and enhance electrical performance as well as reliability of the electronic package. In this paper, a kind of TGV wafer with tungsten(W) vias is introduced and its RF performance is simulated. Using this kind of TGV interposer, a one-bit RF MEMS switched-line phase shifter and its package are designed.
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