Abstract

The paper proposes multibit through glass via (TGV) for high-density electrical interconnection in three-dimensional (3-D) integration. By the virtue of multi-bit vias which comprise of TGVs filled with copper-carbon nanotube (Cu-CNT) composite and separate conducting pads, the design of a novel differential multibit (DM) TGVs is proposed and examined. A distributed π-type transmission line model for the modeling of such TGVs is established and the frequency dependent impedance is extracted. On the basis of equivalent circuit model, the impact of TGV parameters and CNT filling ratio on the signal insertion loss of proposed Cu-CNT based DM TGVs is evaluated. It is encouragingly observed that due to the dominance of conductor loss, composite DM TGVs exhibit unique electrical characteristics which are totally different from its through silicon via (TSV) counterparts.

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