Abstract
In this paper, we investigate and compare the performance of most promising upcoming devices like double gate (DG) FinFET and graphene nanoribbon (GNR) field effect transistor (GNRFET) based ternary logic gates have been explored. The ternary logic gate circuits are designed using state-of-the-art sub-32nm technology so as to obtain the characteristics of a lower voltage, lower power consumption as compared to other gates. Comprehensive experiments are performed in various test situations, different load capacitance and supply voltages using Synopsys HSPICE with 32nm-DG-FinFET and 32nm-GNRFET technologies. The simulation results demonstrate that the GNRFET-based ternary logic gates are more robust than DG-FinFET technology in terms of speed, power consumption, power delay product (PDP).
Published Version
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