Abstract
The graphene nanoribbon (GNR) field effect transistor is one of the most competitive candidates for beyond-CMOS nanoelectronics because of the special electric characteristics of graphene. During graphene preparation, vacancy defects are inevitably introduced and affect transistor performances. In this Letter, four typical vacancy defects in GNR (i.e. single vacancy, divacancy, Stone-Wales and 555 777 defects) are examined. By quantum-mechanics-based simulation, the effects of these four defects on the energy band of the GNR are analysed. Moreover, their effects on the performances of the GNR field effect transistor, such as transmission coefficient and transfer characteristics, are studied and compared for various defect locations in the channel.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
