Abstract
The ballistic performance of armchair graphene nanoribbon (GNR) field effect transistors (FET) with doped source and drain at different lengths of the channel are studied by self-consistently solving the non-equilibrium Green's Function (NEGF) transport equation in an atomistic basis set with a 3-D Poisson equation. The I– V characteristics of the simulated model manifests the ballistic top of the barrier and tunneling under the barrier currents in different lengths of the intrinsic channel for two different doping of the source and drain extensions of the device. The length-dependent maximum cut-off frequency is derived.
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