Abstract
This paper presents the design of a high gain low noise amplifier operating in a bandwidth of .5014 GHz for wireless applications. High gain of 16.17dB is achieved at a frequency of 4 GHz. The Low noise amplifier is an electronic amplifier used to amplify possibly very weak signals. Its mostly placed at the front-end of a radio receiver circuit so that the effect of noise from subsequent stages of the receiver chain is reduced by the gain of the LNA. The transistor used here for the design of LNA is GaAs FET N76000. The high gain low noise amplifier is designed by using AWR microwave office version.
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