Design and Performance Analysis of Double Gate Vertically Stacked MoS2 Nanosheet Field Effect Transistor

Abstract

Abstract In this work we report a vertically stacked nanosheet Field Effect Transistor (NSFET) in double gate configuration using transition metal dichalcogenide (TMD) based molybdenum disulphide (MoS2) as the conducting channel. The performance of the NSFET is analysed for number of channels, different channel thickness, different source/drain contacts. The performance of the device at different temperatures (T) also analysed. The proposed NSFET with three vertically stacked channels, exhibits a ON current (ION) of 30.6 µA/µm, Subthreshold swing (SS) of 69 mV/dec and ON to OFF current ratio of more than 108 at Vds=1V. Further the ION can be improved with multi-layer channel thickness. The performance of the vertically stacked MoS2 NSFET in junction less (JL) and inversion mode (IM) is compared, it is concluded from the simulations that JL vertically stacked MoS2 NSFET more immune to short channel effects such as threshold voltage (Vth) roll-off and drain induced barrier lowering (DIBL).