Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings

Abstract

A nearly-ideal edge termination for GaN p–n junctions was designed and demonstrated using Mg-ions implanted field limiting rings (FLRs). The FLRs were fabricated via the ultra-high-pressure annealing process after implanting Mg-ions into the etched n-type region outside the main p–n junction. The results of the technology computer-aided design simulation indicate that by optimizing the space and width of the rings, the breakdown voltage (BV) can be increased by over 90% of the ideal parallel plane BV (973 V). Accordingly, the fabricated diodes exhibited low leakage current and a BV of 897 V (92% of the ideal BV).