Abstract
The effect of O 2 on KTFR photoresist layers has been studied using the microprojektion technique. For very thin films the requested exposure time in air is approximately 300 times longer than that in N 2. A short heat treatment will increase the light sensitivity nearly to the level observed in N 2. On thick resist films only the top layer becomes insensitive in air. The thickness w of this desensitized layer is, for medium exposure times, virtually only dependent on the illumination B and the partial pressure p 0 of the O 2 in the ambient ( w ∼ √ ( p 0/ B)). To explain these observations it is proposed that during exposure O 2 is trapped in the resist, and that it is resupplied by diffusion from the surface. The quality of the image and the broadening of slit patterns was also investigated. Optimum exposure conditions are given.
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