Abstract
We have studied the depth and spatial profiles of vacancies in Czochralski-grown silicon wafers by positron annihilation spectroscopy. By using a variable energy positron beam and γ-ray spectroscopy, we have obtained depth profiles of defects in as-grown, annealed, and 〈100〉 epitaxial Si wafers. We discuss these results in terms of vacancies and oxygen precipitates. The bulk position lifetime measurements, made as a function of axial displacement of a positron source, resolve vacancies, and divacancies in the wafer.
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