Abstract
We have studied the depth and spatial profiles of vacancies in Czochralski-grown silicon wafers by positron annihilation spectroscopy. By using a variable energy positron beam and γ-ray spectroscopy, we have obtained depth profiles of defects in as-grown, annealed, and 〈100〉 epitaxial Si wafers. We discuss these results in terms of vacancies and oxygen precipitates. The bulk position lifetime measurements, made as a function of axial displacement of a positron source, resolve vacancies, and divacancies in the wafer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
