Abstract
The deposition of hydrogenated amorphous silicon (a-Si:H) films over a large area were performed using an electron cyclotron resonance (ECR) plasma with a multi-slot antenna. The uniformity of the ECR plasma was within 5% over 200 mm in diameter, and the density and temperature of electrons in front of a substrate were 7 × 10 16m −3 and 6 eV, respectively. Hydrogenated amorphous silicon films were deposited from flowing SiH 4(10%) He gas. The deposited films were almost 200 mm in diameter, corresponding to that of the plasma. The deposition rate, optical band gap, and infrared (IR) absorption of the films were investigated to find whether the multi-slot antenna was effective for chemical vapor deposition (CVD); as the substrate temperature was increased, the optical band gap decreased.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
