Abstract
We describe the preparation and properties of hydrogenated amorphous silicon (a-Si:H) and polycrystalline Si (poly-Si) films deposited by electron cyclotron resonance (ECR) reactive plasma deposition. Hydrogen radicals are generated in a physically remote ECR plasma source and are allowed to interact with silane near the growth surface. By controlling the flux of reactive hydrogen species, polycrystalline and amorphous silicon films were systematically grown. Poly-Si films having large Hall mobilities of 35 cm2/V s were deposited at temperatures as low as 450 °C without subsequent annealing. High-quality a-Si:H films were deposited at temperatures as high as 450 °C. Plasma properties near the growth surface were characterized using both optical emission spectroscopy and Langmuir probe techniques.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
