Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks

Abstract

In this study, we fabricated MOSFETs with Al2O3/InGaAs or HfO2/Al2O3/InGaAs gate stacks. The surface was subjected to nitrogen plasma and trimethylaluminum cleaning prior to low-temperature atomic layer deposition. Electron mobility was extracted using the capacitance–gate voltage (C–VG) and drain current–gate voltage (ID–VG) characteristics. We determined that the mobility decreased when the gate voltage sweeping width increased during C–VG and ID–VG measurements. In addition, we determined that the lowering of the deposition temperature to 120 °C improved the mobility of MOSFETs with HfO2/Al2O3/InGaAs gate stacks as compared with that corresponding to deposition at 300 °C. Furthermore, HfO2/Al2O3/InGaAs gate stacks with various Al2O3 thicknesses were fabricated. When the number of Al2O3 deposition cycles was more than 4, the mobility of MOSFETs with HfO2/Al2O3/InGaAs gate stacks improved, reaching the value of the Al2O3/InGaAs gate stack.