Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique

Runze Han,Jinfeng Kang,Zhe Chen,Yudi Zhao,Lifeng Liu,Xiaoyan Liu,Peng Huang

doi:10.1186/s11671-016-1807-9

Runze Han, Jinfeng Kang + Show 5 more

Open Access

https://doi.org/10.1186/s11671-016-1807-9

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Abstract

In this paper, resistive random access memory (RRAM)-based crossbar arrays with the cell structure of Pt/[AlOy/HfOx]m/TiN were fabricated by using atomic layer deposition (ALD) technique. The RRAM devices in the arrays show excellent performances such as good uniformity and high reliability. Based on the fabricated RRAM array, a complete set of basic logic operations including NOR and XNOR were successfully demonstrated.

Highlights

Resistive random access memory (RRAM) is regarded as one of the most promising candidates for generation non-volatile memory due to its advantages such as low cost, fast write/read speed, low-energy consumption, and easy 3D integration [1,2,3,4]
This computing in memory ability of the RRAM crossbar array will greatly reduce the time and energy consumption in the data shuttling process between the processing unit and memory [12], making RRAM crossbar arrays appealing for developing beyond traditional von Neumann computing architectures [8,9,10, 13, 14]
A tight set voltage distribution will make it easier to choose proper amplitudes of reference voltage applied on the input cell and the supply voltage applied on the output cell

Summary

Introduction

Resistive random access memory (RRAM) is regarded as one of the most promising candidates for generation non-volatile memory due to its advantages such as low cost, fast write/read speed, low-energy consumption, and easy 3D integration [1,2,3,4]. Each cell in a RRAM crossbar array can be used as input, output, assistance, and memory at different stages [8, 10]. This computing in memory ability of the RRAM crossbar array will greatly reduce the time and energy consumption in the data shuttling process between the processing unit and memory [12], making RRAM crossbar arrays appealing for developing beyond traditional von Neumann computing architectures [8,9,10, 13, 14]

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