Effect of plasma growth temperature on resistive switching behavior of Pt/TiO<inf>2</inf>/n+Si ReRAM

Abstract

Nano scale Resistive Random Access Memory (ReRAM) is considered the promising candidate for next generation Non Volatile Memory (NVM). The resistive switching (RS) of majority ReRAM devices is affected by the thin film quality of deposition and the post deposition annealing applied. Present work reports the effect of Growth Temperature (GT) control during Plasma Enhanced Atomic Layer Deposition (PEALD) technique on the RS behavior of Pt/TiO 2 /n+Si ReRAM devices. X-ray photoelectron spectroscopy (XPS) was employed to investigate the elemental composition and binding energy of the deposited TiO2 thin films. Electrical characterization was carried out to study RS behavior and mechanism of the fabricated ReRAM devices. A bipolar asymmetric RS was exhibited by the ReRAM devices at room temperature without the need of the post deposition annealing. The RS mechanism was found to be a function of GT. The n+Si substrate used in the present investigation has offered the desired CMOS compatibility for ReRAM. Pt/TiO2/n+Si can be a promising choice as a basic unit of Si based Resistive Non-Volatile-Memory in future.