Abstract
This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental observations. Device degradations due to the hot carriers junction avalanche are studied by a physical parameters extraction method, leading to an understanding of the degradation processes. Results show that a protective resistor load can reduce the degradation effect in the device.
Highlights
Microcircuits in space and nuclear environment interact with various particles, including galactic cosmic rays, radiation belt protons, electrons, neutrons and ions, all of which can affect the normal operations of the devices
We evaluate the effect of the drain avalanche hot hole injection on the electrical parameters of the VDMOSFET when a heavy ion passes through the devices biased in the off state
In order to explain our experimental results, a synthetic presentation, in part 2, of the irradiation induced effects allows us to analyze the process involved in the device degradation. These results show that a protective resistor load (R:) can reduce the degradation effect in the device resulting from the interaction of a single high-energy heavy ion (HI) passing through the device
Summary
Microcircuits in space and nuclear environment interact with various particles, including galactic cosmic rays, radiation belt protons, electrons, neutrons and ions, all of which can affect the normal operations of the devices. Functional disturbances, arising from interactions with single high-energy particles, are often called "single-event effects" (SEE’s). Microcircuit functions can be compromised by other radiation effects than SEE, such as the displacement damage and the dose effects. Displacement damage is mainly caused by interaction of high energy incident particles with the material creating vacancies and interstitial, which are the direct results of displaced atoms in the crystal. In order to ensure that space system electronics will complete their mission without a radiation-induced failure, a program test is required. This program will usually involve radiation effects characterization of sensitive electronic devices as well as the development of the fragment hardness assurance approach for critical parts. It is necessary to perform a radiation testing to understand the failure mechanisms and to characterize the radiation response of specific devices
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