Abstract
Response of 8 nm Ta 2O 5 stacks with Al and Au gate electrodes to voltage stress at room temperature and at 100 °C is investigated. Stress-induced leakage current (SILC) reveals significant gate dependence and distinct difference to SILC in SiO 2. The mechanisms for SILC generation and stress degradation are discussed. Unlike SiO 2, pre-existing traps and positive charge build-up are recognized as a key factor for generation of SILC in Ta 2O 5 stacks.
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