Abstract
Graphical abstractDisplay Omitted SILC caused by hot-hole injection depends only on the number of injected holes.SILC is independent of the filed, and carrier density and energy at the stress.SILC increases exponentially at an early stress and linearly at a large stress. Stress induced leakage current (SILC) of the gate dielectrics is one of the most critical problems in a scaling down of flash memories, and it is important to clarify the mechanism of SILC generation. In this paper SILC caused by substrate hot-hole injection is investigated. The SILC caused by hot-hole injection depends only on the number of injected holes and is independent of the oxide field, hole energy, and injected hole density. SILC is defined by the current at largest leakage path, and the largest leakage path increases with the increase of the stress at the early stress region and SILC is defined by average value of the large number of leakage spots, then the SILC increases linearly with the stress.
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