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Abstract
Photo-generated charge carriers can be detected by microwave absorption. This enables non-destructive measurements of photoconductivity with a spatial resolution depending on the spot size of the light source. In addition, the photoconductivity can be measured as a function of time during light on and off with high time resolution. The resulting photoconductivity transients contain information about defect parameters like conventional methods such as deep level transient spectroscopy or photo-induced current transient spectroscopy, however, with the advantage of high spatial resolution. First results of microwave detected photo-induced current transient spectroscopy measurements on different semi-insulating gallium arsenide samples will be presented.
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