Abstract

Abstract : DLTS (deep level transient spectroscopy), PICTS (photo-induced current transient spectroscopy), and EBICTS (electron-beam induced current transient spectroscopy) are experimental techniques to determine the deep level spectrum of non-ideal semiconductors. These methods operate by externally exciting a sample of the material, and then monitoring the time constants of the subsequent return to equilibrium. We analyze the conventional (rate window) method of evaluating the experimental data obtained by these techniques, and find it wanting in many respects. A new method (termed spectral analysis) is then presented which is superior both in terms of accuracy and resolution, and which also makes the deep level spectroscopy techniques more suited for numerical evaluation.

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