Abstract
The time and voltage dependence of the neutral defect andpositive charge generated in the SiO2/ZrO2 gate dielectricstack during constant gate voltage stress ofSi/SiO2/ZrO2/TiN structures is shown to be quite wellreproduced by a dispersive hydrogen transport model. The model isbased on the assumption that impacting electrons release H+ ionsnear the Si/SiO2 interface which then randomly hop around in thegate dielectric stack, where they can be trapped and formhydrogen-induced defects. By comparing the experimental results andthe model, it is found that the positive charge is located close tothe Si/SiO2 interface, while the neutral defect resides in theZrO2 layer. We suggest that these defects concern the positivelycharged[Si2 = OH]+ centre and neutral ZrOH centre,respectively.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
