Abstract
Abstract We report gallium nitride (GaN) vertical merged pn-Schottky (MPS) diodes with T-shaped p-GaN shielding rings (SRs). The embedded T-shaped SR features an overlapped depletion region by the lateral and vertical p n junctions under reverse bias condition, which can effectively enhance the charge coupling effect and homogenize the 2-D electric field distribution. In the meantime, the incorporation of the T-shaped SRs can minimize unnecessary depletion of the vertical conduction channel and guarantee a decent current spreading through the drift region. The impact of the key design parameters on the reverse breakdown and forward conduction performance are investigated systematically. We found that the doping concentration and the geomatical shape of the T-shaped p-GaN SRs are closed related to the electric field distribution and forward current conduction behavior, which determines the reverse breakdown and forward conduction performance. With optimum design parameters of the T-shaped SRs, the breakdown voltage of the MPS diodes features a dramatic improvement to 2749 V from 1123 V in conventional MPS diodes. The results can provide a design strategy for high performance vertical GaN power diodes towards high-power and high-frequency applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
