Abstract
Using zinc diffusion as a model case, the generation and role of extended defectsformed in GaP single crystals during dopant diffusion at elevated temperatureshave been investigated extensively by methods of analytical transmission electronmicroscopy of cross-section specimens. The temporal evolution of the defectstructure and the anomalous shapes of the zinc concentration profiles aredependent upon the chosen diffusion parameters. A comparison with results forGaSb and GaAs indicates that types, formation processes and many aspects ofthe temporal evolution of the diffusion-induced defects represent generalphenomena for III–V semiconductors under high-concentration dopant diffusion.
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