Abstract
Abstract In this chapter, a set of strain characterization methods in Transmission Electron Microscopy is introduced focusing on their key principles and their main interests. First, several direct methods measuring the deformation directly from the atomic columns positions on a high resolution electron micrograph are detailed. In the following, a few indirect methods measuring the strain on geometries different from the real space unit cell are described. Finally, a novel indirect strain characterization method in Scanning Transmission Electron Microscopy (STEM) is presented. In this new technique, an interference between the scanning grid of the electron beam raster and the crystal lattices is designed to generate a set of Moire fringes forming a STEM Moire hologram. The Moire arrangement is subsequently translated into 2D deformation maps with field of views up to couple of microns. STEM Moire interferometry is still in early stages of development and an up to date status is here presented.
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