Abstract
Transport through grain boundaries in polycrystals is described from first principles using quantum scattering theory, explicitly including Feshbach resonances to account for intermittently trapped electronic surface states. An effectiveT-matrix is derived then used to calculate the electrical conductivity which exhibits breakdown, a sharp increase at a critical intergrain bias. Under typical conditions where the electron thermal energy,kBT, is much less than the intergrain barrier height,φb, the electrical conductivity has the formσ∼T-1/2e-φb/kBT. Temperature dependence of the conductivity is also considered for thermal energies much larger than the applied bias, as may be realized in tightly-compressed grains.
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