Abstract
Using the methods of transmission electron microscopy and measurement of the hole concentration profile with the aid of bevels, two types of Si samples have been investigated: (1) preliminarily amorphized with Ar + Si + ions and then irradiated by B + ions; (2) exposed to the same radiation regimes as 1, but with additional irradiation by As + ions. Then samples were annealed by a two-stage process in N 2 . Samples 1 were shown to have a layer distribution of secondary defects (SDs). Samples 2 had only a thin subsurface SD layer and radiation-enhanced diffusion of implanted boron (but not arsenic) occurred in deeper layers. The results can be explained by nonlinear interaction in a nonequilibrium impurity-defect system.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call