Abstract
Deep-level admittance spectroscopy (DLAS) of DX centers in AlxGa1−xAs:Sn (0.2<x<0.6) reveals the presence of three levels SN1, SN2, and SN3 related to the Sn donor. While SN1 and SN3 are observed in all the samples, SN2 is prominently seen only in the indirect band-gap samples. The conventional capacitance deep-level transient spectroscopy (DLTS) is found to be unsuitable for the study of the DX center in AlxGa1−xAs:Sn with x>0.35 because of the strong freeze-out of free carriers in these samples. Even in the case of low AlAs mole fraction samples (x<0.35), the DLTS technique fails to reveal all the levels observed by DLAS and provides information only on the SN3 level.
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