Abstract
We present a critical analysis of the deep level spectroscopy of electron emission from Si-related DX centers in AlxGa1−xAs and GaAs. We have observed two dominant deep levels of DX centers in AlxGa1−xAs with different AlAs mole fractions and in heavily doped GaAs. Alloy disorder in AlxGa1−xAs cannot explain the existence of these two distinct levels, which is independent of alloy composition. A possible origin of the two levels is discussed.
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