Abstract
The paper reports on a deep level transient spectroscopy analysis of Te-related DX centers in AlxGa1−xAs with aluminum composition x=0.40. As was shown from experimental results, the state energy of this trap shows a microscopic structure due to an alloy effect. A theoretical analysis based on a multi-step scheme has been made to explain the electron emission from a multiconfigurate center. Using this model, we derived the binding energies of the splitted Te-DX states in the alloy material studied.
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