DC and RF Characteristics of AlN/GaN Doped Channel Heterostructure Field Effect Transistor

Abstract

First small signal, large signal and RF power characteristics of experimental 3 µm gatelength AlN/GaN devices between RT and 200°C are reported. A high drain breakdown of 42 V and the absence of dispersion effects indicate that this challenging heterostructure is indeed attractive for the development of high power/high speed devices.