CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz

M Asif Khan,M.S Shur,Q Chen,J.A Higgins,L.F Eastman,W.J Schaff,J Burm,B.T Dermott

doi:10.1109/55.545778

CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz

M Asif Khan, M.S Shur + Show 6 more

https://doi.org/10.1109/55.545778

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Journal: IEEE Electron Device Letters	Publication Date: Dec 1, 1996
Citations: 116

Affiliation: Omega Optics (United States), University of Virginia, Rensselaer Polytechnic Institute, Rockwell Automation (United States), Cornell University

#Doped Channel Heterostructure Field Effect #Channel Heterostructure Field Effect Transistor + Show 8 more

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Abstract

We report on a 0.15-/spl mu/m gate length AlGaN/GaN doped channel heterostructure field effect transistor (DC-HFET) with maximum frequency of oscillation in excess of 97 GHz. HFETs based on our doped channel design exhibited CW microwave operation up to 15 GHz with a maximum output power of approximately 270 mW/mm at 10 GHz. These values are still limited by parasitics and can be significantly improved by optimizing the device design.

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