Abstract
Maximum oscillation frequency fMAX as high as 188 GHz at 300K and 227 GHz at 50K are reported for a 0.1×30 µm2n-type strained Si/Si0.6Ge0.4 modulation doped field-effect transistor (n-MODFET) together with high quality DC characteristics. These fMAX are the highest values reported so far for Si-based hetero-FETs. The frequency performances are discussed using analytical expressions of fMAX and fTi (intrinsic current gain cutoff frequency) together with the main equivalent circuit elements extracted.
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