Abstract
The state of the art for a planar doped pseudomorphic Al0.2Ga0.8As/In0.2Ga0.8As HEMT with a gate length of 0.1 µm is presented. The devices exhibit an extrinsic and intrinsic transconductance of 1070 and 1510 mS/mm, respectively, a maximum current density of 550 mA/mm and a peak current gain cutoff frequency of 220 GHz. These results are the highest ever reported for HEMTs fabricated on GaAs substrates.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call