Abstract
In this work, the doped body, switching speed, high input impedance and other advantages of MOSFET has been utilized for signal amplification in the Cylindrical Surrounding Double-Gate (CSDG) MOSFET. The three-dimensional description of the CSDG has been explained for amplification in comparison with other MOSFET types. It has been observed that the voltage gain and transconductance are higher in CSDG MOSFET as compared with Single-Gate (SG) MOSFET and Double-Gate (DG) MOSFET due to the radii effect on the amplification. The analysis was further verified through simulating the parameters for better understanding.
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