Abstract
An analysis is presented of the influence of the quasi-neutral base and the back contact on the measured C-V dependence of the Schottky barrier in undoped semi-insulating (USI) GaAs. It is shown that under specific experimental conditions, which include temperature, test signal frequency and sample geometry, routine C-V analysis can be applied to calculate the effective charge in the Schottky barrier, which is controlled by the concentration of fully ionized EL20+/, native donor-like states, if the capacitance is measured at a sufficiently low test signal frequency. Results of the low-frequency C-V analysis of the Schottky barrier in bulk USI GaAs supplied by four different manufacturers are presented. The existence of a depletion region in USI GaAs under the metal or injecting contact is demonstrated in a convincing way and the concentration of the effective charge in the barrier is determined.
Published Version
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