Abstract
This paper proposes an accurate model to investigate the current–voltage characteristics of AlGaN/GaN high electron mobility transistors in presence of InN quantum dots. This work has been done for different InN quantum dot size and different distance between quantum dots. The presence of InN quantum dots will approximately cause a Gaussian peak in the linear regime of the current–voltage characteristics. So, applying this model and using the I–V characteristics one can find the position or size of quantum dots in the structure.
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