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Abstract
N-polar InN quantum dots and thin layers grown by metal organic chemical vapor deposition were shown to exhibit tunable emission from around 1.00 μm to longer than 1.55 μm at room temperature. The emission wavelength was dependent on both the growth temperature and quantum dot size or InN layer thickness. No measurable change in InN quantum dot emission wavelength or intensity was observed after capping of the InN quantum dots with GaN, paving the way for incorporating N-polar InN quantum dots into buried regions of device structures.
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