Abstract
In this work the capacitance of AlGaN/GaN heterostructure in presence of InN quantum dots has been studied. This calculation has been done for different InN quantum Dot size, energy dispersion and in different temperatures. The presence of InN quantum dot will cause a negative differential capacitance which can evidence the position of quantum dots in the structures. Our calculation results show this negative differential capacitance is much higher at low temperature and for quantum dots with low energy and higher size dispersion.© (2008) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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