Abstract
Germanium (Ge)-SiO2 composite films fabricated by using radio frequency magnetron co-sputtering were subjected to nanosecond (ns) laser pulse irradiation. The intense laser irradiation effects on as deposited composite films lead to the modification and the formation of Ge nanocrystals (NCs) embedded in SiO2. The as-deposited and laser treated samples have been characterized with X-ray diffraction (XRD) and micro-Raman spectroscopy to understand the formation of Ge NCs due to laser irradiation. The respective Ge NCs related peaks in XRD pattern as well as the Ge-Ge related optical phonon vibrational peaks in micro-Raman spectra confirm the formation of Ge NCs. Transmission electron microscopy images indicate the formation of Ge NCs after the laser irradiation. The effects of laser pulse energy and the irradiation time play a vital role in the crystallization of the as-deposited films. The changes in the Ge NCs size related shifts in the peak position of Ge optical phonons from the Raman spectra of the respective samples are explained with Ge-Ge optical phonon vibrational model. The observed photoluminescence emission in the green and red region of the visible spectrum from the laser treated samples are explained using the phenomenon of creation of Ge NCs in the Ge+SiO2 composite films and the oxygen defects created in SiO2 during the ns laser treatment.
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