Abstract
We have investigated the optical properties of silicon pillars formed by cumulative nanosecond pulsed excimer laser irradiation of single-crystal silicon in vacuum created under different repetition rates. The changes in optical characteristics of silicon pillar were systematically determined and compared as the number of KrF laser shots was increased from 1 to 15,000.The results show that silicon pillar PL curves exhibit a blue band around 430 nm and an ultraviolet band peaking at 370 nm with the vanishing of the green emission at 530 nm. A correlation between the intensity of the blue PL band and the intensity of the Si–O absorption bands has been exploited to explain such emission, whereas, the origin of the ultraviolet band may be attributed to different types of defects in silicon oxide.
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