Abstract
AbstractArrays of well defined silicon microcolumns were formed by cumulative nanosecond pulsed excimer laser irradiation of single‐crystal silicon in vacuum. The changes in silicon surface morphology were systematically determined and compared as the number of KrF laser shots was increased from 1 to 15 000 in vacuum. Moreover, as the number of laser shots increases, formation of well defined silicon pillars oriented towards the laser beam has been observed. Finally, the reflectance spectra show a total reflectance of 5%–6% in the wavelength region 375–800 nm and that of 0% at a wavelength of about 870 nm. Copyright © 2010 John Wiley & Sons, Ltd.
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