Abstract
Crystal orientations of orthorhombic BaMgF4 films grown on Si(100), (111), and (110) substrates either by solid phase crystallization (SPC) or by molecular beam epitaxy (MBE) have been investigated. It has been found from X-ray diffraction analysis, Rutherford backscattering spectrometry, and X-ray pole figure measurement that preferentially (010)-oriented films are grown on any substrates by SPC method, while (011)-and (120)-oriented films are grown on respective Si(100) and (111) substrates by MBE method. It has been found that the <011>- and <120>-axes of crystallites in the films are well aligned to the surface normal axes of the substrates and that their azimuthal orientations are determined by the substrate symmetry.
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