Abstract
Cryogenic electronics has grown in its widespread use for various technological applications. Particularly, CMOS devices and circuits are more frequently used in such systems due to their dominance in the electronics industry. At cryogenic temperatures, characteristics of CMOS devices vary, which should be characterized with measurements. In this paper, the changes in the electronic behavior of a low threshold voltage (VTH) n-channel MOSFET (nMOSFET) are captured experimentally. The results are then compared with the measurements of a regular nMOSFET having the same channel width and length. It is shown that although the VTH increase of both transistors is at the same amount, this value corresponds to a more significant percentage of the nominal threshold voltage for the low VTH nMOSFET.
Highlights
CRYOGENIC systems, which can be defined as systems operating in the temperature regime below 100 K, have recently become prominent and widespread with increasingly more applications in the defense industry, space communications and research, novel computation architectures, and information storage systems
The low VTH n-channel MOSFET (nMOSFET) characterized in this work has a channel length of 0.5 m and a channel width of 35 m with seven fingers
To better understand the I – V characteristics of this device, a same-size regular nMOSFET is experimentally analyzed, and the results acquired from both transistors are compared
Summary
CRYOGENIC systems, which can be defined as systems operating in the temperature regime below 100 K, have recently become prominent and widespread with increasingly more applications in the defense industry, space communications and research, novel computation architectures, and information storage systems. In the military, infrared cameras should have high precision detectors, for which the readout integrated circuits must have a very low noise figure. Such a performance is only possible when the operating temperatures are reduced down to the cryogenic range [1, 2]. Qubits enable completely different algorithms with much higher computational efficiency to be Qubits reach their operational state only when the temperature is cooled down to 15 – 20 mK [6]. To design electronic circuits that will operate with high performance in cryogenic temperature range, devices, and components building such systems should be experimentally characterized.
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