Low-Voltage High-Gain 0.2 µm N-Channel Metal Oxide Semiconductor Field Effect Transistors by Channel Counter Doping with Arsenic

Abstract

A counter-doped n-channel metal oxide semiconductor field effect transistor (NMOSFET) whose threshold voltage is controlled by channel counter doping with arsenic is proposed in order to realize a sub-half-micron device with low threshold voltage. It is found that threshold voltage adjustment is possible without losing good short-channel characteristics. The counter-doped NMOSEET is applicable to 0.2 µm devices with a threshold voltage of 0.2 V. Electron mobility of this transistor is found to be 30% higher than that of conventional devices. Smaller gate current also reduces hot carrier-induced threshold voltage shift.