Correlation of modulated optical reflectance with silicon carrier lifetime and impurity concentration

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Modulated optical reflectance imaging using a scanning dual laser apparatus is a new, nondestructive tool for the characterization of semiconductor surfaces. One can expect that semiconductor material parameters such as doping concentration, impurity and damage level, which influence the minority-carrier lifetime and diffusion length, may also influence the magnitude of the modulated reflectance signal. A semi-quantitative correlation is presented for multilayer epitaxially grown structures with germanium and boron-induced dislocations, as well as on their Czochralski silicon substrates, which contain a denuded zone.