Abstract
Impurity concentration effects on radiation defects and minority carrier (hole) diffusion length in 1-MeV electron irradiated n-InP have been studied by deep level transient spectroscopy and the electron beam induced current method. Trap concentrations are found to markedly decrease with an increase in the Si-impurity concentration. It is also indicated that Si-impurity doping more than 1017 cm−3 of concentration shows a strong suppression effect on degradation in minority carrier diffusion length, caused by electron irradiation in n-InP.
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