Abstract
Modulated optical reflectance (MOR) images of plastically-deformed silicon show slip bands created by the deformation, which are also visible in electron beam induced conductivity images. Annealing the material decreases the electrical activity of the dislocations, but has no effect on the MOR image. MOR measurements of implanted and annealed silicon wafers show that a high MOR response is caused by decreased diffusivity in the surface layer. We conclude that the MOR contrast of defects in silicon is due primarily to scattering by dislocations and ionized impurities, and that carrier recombination is not significant.
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