Abstract
Photovoltaic (PV) properties of ferroelectric SrRuO3/BiFeO3/SrRuO3 (SRO/BFO/SRO) epitaxial thin-film capacitors are investigated. The experimental results of the markedly reduced PV response caused by the doping of Mn provide evidence that the PV properties originate not from the bulk-derived PV effect but from an interfacial band bending. We show that the capacitors having a defective layer composed of oxygen vacancies at the SRO/BFO interface exhibit a markedly large photocurrent. Our study demonstrates that a cooperative effect between the interface charges arising from ferroelectric polarization and the oxygen-vacancy-rich layer enhances the PV response in capacitor form in the BFO system.
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