Abstract
We prepared (Bi0.94Eu0.06)(Fe0.94Mn0.06)O3 (BEFM), (Bi0.94Eu0.06)FeO3 (BEFO), and BiFeO3 (BFO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a pulsed laser deposition method. X-ray diffraction and Raman scattering results showed that the rhombohedral structure of the BFO film was not affected by the substitution of Eu and Mn ions. A much reduced leakage current was observed in the BEFM thin film capacitor compared to the BEFO and BFO thin film capacitors. Higher electrical breakdown field was observed in the BEFM and BEFO thin film capacitors than in the BFO thin film capacitor.
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